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Teilenummer | KSD1691 |
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Beschreibung | NPN Epitaxial Silicon Transistor | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 5 Seiten KSD1691
Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current
• High Power Dissipation: PC = 1.3W (Ta=25°C)
• Complementary to KSB1151
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
PC Collector Dissipation (Ta=25°C)
PC Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
hFE3
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter Saturation Voltage
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤50µs, duty Cycle≤2% Pulsed
VCB = 50V, IE = 0
VEB = 7V, IC = 0
VCE = 1V, IC = 0.1A
VCE = 1V, IC = 2A
VCE = 1V, IC = 5A
IC = 2A, IB = 0.2A
IC = 2A, IB = 0.2A
VCC = 10V, IC = 2A
IB1 = - IB2 = 0.2A
RL = 5Ω
hFE Classificntion
Classification
hFE 2
O
100 ~ 200
Y
160 ~ 320
Value
60
60
7
5
8
1
1.3
20
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
60
100
50
Typ.
0.1
0.9
0.2
1.1
0.2
Max.
10
10
Units
µA
µA
400
0.3 V
1.2 V
1 µs
2.5 µs
1 µs
G
200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ KSD1691 Schematic.PDF ] |
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