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PDF KSB1017 Data sheet ( Hoja de datos )
| Número de pieza | KSB1017 | |
| Descripción | Power Amplifier Applications | |
| Fabricantes | Fairchild Semiconductor | |
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KSB1017
Power Amplifier Applications
• Complement to KSD1408
1 TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation ( TC=25°C)
Junction Temperature
Storage Temperature
Value
- 80
- 80
-5
-4
- 0.4
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
IC = - 50mA, IB = 0
VCB = - 80V, IE = 0
VEB = - 5V, IC = 0
VCE = - 5V, IC = - 0.5A
VCE = - 5V, IC = - 3A
IC = - 3A, IB = - 0.3A
VCE = - 5V, IC = - 3A
VCE = - 5V, IC = - 0.5A
VCB = - 10V, f = 1MHz
Min.
-80
40
15
Typ.
-1
-1
9
130
Max.
- 30
- 100
240
Units
V
µA
µA
- 1.7
- 1.5
V
V
MHz
pF
hFE Classification
Classification
hFE1
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSB1017.PDF ] | |
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