(PDF) KDV245 Datasheet - VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)

Número de pieza	KDV245
Descripción	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
Fabricantes	KEC(Korea Electronics)
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF Band Radio. FEATURES High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 (Typ.) Useful for Small Size Tuner. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 10 150 -55 150 UNIT V KDV245 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50+_ 0.1 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30+0.06/-0.04 E 1.70+_ 0.05 F MIN 0.17 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4+_ 0.05 L 2 +4/-2 M 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance VR IR C0.5V C2.5V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=0.5V, f=1MHz VR=2.5V, f=1MHz C0.5V/C2.5V, f=1MHz VR=1V, f=470MHz MIN. 10 - 7.3 2.75 2.4 - TYP. - - - - 2.5 0.35 MAX. - 3 8.4 3.4 - - UNIT V nA pF Marking Type Name ED 2003. 1. 27 Revision No : 0 1/2 1 page

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PDF KDV245 Data sheet ( Hoja de datos )