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72425 Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer 72425
Beschreibung N-Channel 150-V (D-S) 175C MOSFET
Hersteller Vishay Siliconix
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Gesamt 3 Seiten
72425 Datasheet, Funktion
SPICE Device Model SUP80N15-20L
Vishay Siliconix
N-Channel 150-V (D-S) 175°C MOSFET
CHARACTERISTICS
N- and P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72425
12-Jun-04
www.vishay.com
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