|
|
PDF 72022 Data sheet ( Hoja de datos )
| Número de pieza | 72022 | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 72022 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
Si4370DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
Channel-1
Channel-2
30
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.022 @ VGS = 10 V
0.028 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
30 0.50 V @ 1.0 A
ID (A)
7.5
6.5
7.5
6.5
IF (A)
2.0
FEATURES
D LITTLE FOOTr Plus Schottky
D Si4830DY Pin Compatible
D PWM Optimized
D 100% Rg Tested
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
D1 D2
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
G1
Schottky Diode
G2
Top View
Ordering Information: Si4370DY—E3 (Lead Free)
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Parameter
Symbol Channel-1 Channel-2 Channel-1 Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"12
"20
"12
7.5 5.7
6.0 4.6
30
1.7 0.9
2.0 1.1
1.3 0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
MOSFET
Typ Max
52 62.5
93 110
35 40
Schottky
Typ Max
53 62.5
93 110
35 40
Unit
_C/W
www.vishay.com
1
1 page  
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL 1
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
93_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 72022.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 72022 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |