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Número de pieza | 2SD2357 | |
Descripción | Silicon PNP epitaxial planer typeFor low-frequency amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD2357 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistor
2SD2357
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1537
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector power dissipation PC.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC*
Tj
Tstg
10
10
5
1.2
1
1
150
–55 ~ +150
V
V
V
A
A
W
˚C
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1M
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
Conditions
VCB = 7V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 100mA**
IC = 500mA, IB = 5mA
VCB = 5V, IE = –50mA, f = 200MHz
VCB = 5V, IE = 0, f = 1MHz
min
10
10
5
200
typ max Unit
1 µA
V
V
V
800
0.15 V
120 MHz
30 pF
** Pulse measurement
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SD2357.PDF ] |
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