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Teilenummer | 2SD2242 |
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Beschreibung | Silicon NPN triple diffusion planar type Darlington(For power amplification) | |
Hersteller | Panasonic Semiconductor | |
Logo | ||
Gesamt 2 Seiten Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD2242
base voltage 2SD2242A
VCBO
60
80
Unit
V
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
Collector to 2SD2242
emitter voltage 2SD2242A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
80
5
8
4
15
2
150
–55 to +150
V
V
A
A
W
˚C
˚C
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2242
current
2SD2242A
Collector cutoff
2SD2242
current
2SD2242A
Emitter cutoff current
Collector to emitter 2SD2242
voltage
2SD2242A
Forward current transfer ratio
Base to emitter voltage
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VBE
Collector to emitter saturation voltage VCE(sat)
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
min
60
80
1000
2000
E
typ max
200
200
500
500
2
Unit
µA
µA
mA
V
10000
2.5 V
2
V
4
20 MHz
0.5 µs
4 µs
1 µs
1
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 2SD2242 Schematic.PDF ] |
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