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Teilenummer | 2SD2121S |
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Beschreibung | Silicon NPN Epitaxial | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 5 Seiten 2SD2121(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)
Outline
DPAK
4
4
1
2
3
S Type
12 3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
35
35
5
2.5
3
18
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ 2SD2121S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2SD2121 | Silicon NPN Epitaxial | Hitachi Semiconductor |
2SD2121L | Silicon NPN Epitaxial | Hitachi Semiconductor |
2SD2121S | Silicon NPN Epitaxial | Hitachi Semiconductor |
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