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2SD1857A Schematic ( PDF Datasheet ) - Rohm

Teilenummer 2SD1857A
Beschreibung POWER TRANSISTOR
Hersteller Rohm
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2SD1857A Datasheet, Funktion
Transistors
2SD2211 / 2SD1918 / 2SD1857A
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features
1) High breakdown voltage.(BVCEO = 160V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency.(fT = 80MHZ)
4) Complements the 2SB1275 / 2SB1236A.
!External dimensions (Units : mm)
2SD2211
4.0
1.0 2.5 0.5
(1)
(2)
(3)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SD1857A
2SD2211
2SD1918
Symbol
VCBO
VCEO
VEBO
IC
PC
Limits
160
160
5
1.5
3
1
2
1
10
Junction temperature
Tj 150
Storage temperature
Tstg
55 ∼+150
1 Single pulse Pw=100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
3 When mounted on a 40 x 40 x 0.7mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse)
W
1
2
W 3
W(Tc=25°C)
°C
°C
ROHM : MPT3
EIAJ : SC-62
2SD1918
ROHM : CPT3
EIAJ : SC-63
5.5 1.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
* Denotes hFE
2SD2211
MPT3
QR
DQ*
T100
1000
2SD1918 2SD1857A
CPT3
ATV
Q PQ
−−
TL TV2
2500
2500
2SD1857A
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
2SD2211,2SD1918
2SD1857A
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
160
160
5
120
82
Typ.
80
20
Max.
1
1
2
1.5
390
270
Unit
V
V
V
µA
µA
V
V
MHz
pF
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 120V
VEB = 4V
IC/IB = 1A/0.1A
IC/IB = 1A/0.1A
Conditions
VCE/IC = 5V/0.1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz


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