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PDF 2SD1280 Data sheet ( Hoja de datos )

Número de pieza 2SD1280
Descripción Silicon NPN epitaxial planer type(For low-voltage type medium output power amplification)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Transistor
2SD1280
Silicon NPN epitaxial planer type
For low-voltage type medium output power amplification
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Satisfactory operation performances at high efficiency with the
low-voltage power supply.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
1.5±0.1
0.4±0.04
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage VCEO
20
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
2A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : R
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCEO
VEBO
hFE1*1
hFE2
VBE(sat)
VCE(sat)
fT
Cob
Conditions
VCB = 10V, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 500mA*2
VCE = 2V, IC = 1.5A*2
IC = 500mA, IB = 50mA*2
IC = 1A, IB = 50mA*2
VCB = 6V, IE = –50mA, f = 200MHz
VCB = 6V, IE = 0, f = 1MHz
min
20
5
90
50
*1hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
90 ~ 155
RQ
R
130 ~ 210
RR
S
180 ~ 280
RS
T
250 ~ 360
RT
typ max Unit
1 µA
V
V
150 360
100
1.2 V
0.5 V
150 MHz
18 pF
*2 Pulse measurement
1

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