(PDF) 4AK17 Datasheet - Silicon N-Channel Power MOS FET Array

Número de pieza	4AK17
Descripción	Silicon N-Channel Power MOS FET Array
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance RDS(on) ≤ 0.045 , VGS = 10 V, ID = 10 A RDS(on) ≤ 0.065 , VGS = 4 V, ID = 10 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver 1 page Typical Transfer Characteristics 50 75°C 40 VDS = 10 V Pulse Test TC= 25°C –25°C 30 20 10 0 1 2 34 5 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 VGS = 4 V 0.1 0.05 10 V 0.02 0.01 0.005 1 2 5 10 20 50 100 Drain Current ID (A) 4AK17 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test 4 3 2 ID = 50 A 1 20 A 10 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test ID = 20 A 0.08 10 A 0.06 VGS = 4 V 0.04 0.02 VGS = 10 V 20 A 5 A 10 A 5A 0 –40 0 40 80 120 160 Case Temperature TC (°C) 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 4AK17.PDF ]

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PDF 4AK17 Data sheet ( Hoja de datos )