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PDF E208931_HSC278 Data sheet ( Hoja de datos )
| Número de pieza | E208931_HSC278 | |
| Descripción | Silicon Schottky Barrier Diode | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
Main Characteristic
101
100
10−1
10−2 Ta = 75°C
10−3
Ta = 25°C
10−4
10−5
10−6
10−7
10−8
0
0.2 0.4 0.6 0.8
Forward voltage VF (V)
1.0
Fig.1 Forward current Vs. Forward voltage
f=1MHz
10
HSC278
10−4
10−5
Ta = 75°C
10−6
10−7
Ta = 25°C
10−8
0
5 10 15
Reverse voltage VR (V)
20
Fig.2 Reverse current Vs. Reverse voltage
1.0
0.1
0.1
1.0
Reverse voltage VR (V)
10
Fig.3 Capacitance Vs. Reverse voltage
Rev.2, Dec. 2000, page 3 of 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet E208931_HSC278.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| E208931_HSC278 | Silicon Schottky Barrier Diode | Hitachi Semiconductor |
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