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FQPF20N06L Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FQPF20N06L
Beschreibung 60V LOGIC N-Channel MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 



Gesamt 8 Seiten
		
FQPF20N06L Datasheet, Funktion
FQPF20N06L
N-Channel QFET® MOSFET
60 V, 15.7 A, 55 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
November 2013
Features
• 15.7 A, 60 V, RDS(on) = 55 m(Max.) @ VGS = 10 V,
ID = 7.85 A
• Low Gate Charge (Typ. 9.5 nC)
• Low Crss (Typ. 35 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF20N06L
60
15.7
11.1
62.8
± 20
170
15.7
3.0
7.0
30
0.2
-55 to +175
300
FQPF20N06L
5.00
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FQPF20N06L Rev. C1
1
www.fairchildsemi.com






FQPF20N06L Datasheet, Funktion
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2001 Fairchild Semiconductor Corporation
FQPF20N06L Rev. C1
6
www.fairchildsemi.com

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