|
|
PDF FQP32N12V2 Data sheet ( Hoja de datos )
| Número de pieza | FQP32N12V2 | |
| Descripción | 120V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FQP32N12V2 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
FQP32N12V2/FQPF32N12V2
120V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP32N12V2 FQPF32N12V2
120
32 32 *
23 23 *
128 128 *
± 30
439
32
15
4.5
150 50
1 0.33
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP32N12V2
1.0
40
62.5
FQPF32N12V2
3.0
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
1 page  
Typical Characteristics (Continued)
100
D =0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
1 0 -2 s in g le p u ls e
※ N otes :
1 . Z θ JC( t) = 1 .0 ℃ /W M a x .
2. D uty Factor, D =t /t
12
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c ]
101
Figure 11-1. Transient Thermal Response Curve for FQP32N12V2
D =0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
single pulse
1 0 -2
※ N otes :
1 . Z θ JC( t) = 3 .0 ℃ /W M a x .
2. D uty F actor, D = t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF32N12V2
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQP32N12V2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FQP32N12V2 | 120V N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |