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Teilenummer | FQP1N60 |
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Beschreibung | QFET N-CHANNEL | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 8 Seiten QFET N-CHANNEL
FEATURES
• Advanced New Design
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge: 5.0nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON): 9.3Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
THERMAL RESISTANCE
Symbol
RθJC
RθCS
RθJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
FQP1N60
BVDSS = 600V
RDS(ON) = 11.5Ω
ID = 1.2A
TO-220
1
2
3
1. Gate 2. Drain 3. Source
Value
600
1.2
0.76
4.8
±30
50
1.2
4.0
4.5
40
0.32
−55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
−
0.5
−
Max.
3.13
−
62.5
Units
°C/W
© 1999 Fairchild Semiconductor Corporation
REV. B
1
FQP1N60
QFET N-CHANNEL
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D
=
--G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ FQP1N60 Schematic.PDF ] |
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