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FQA24N50 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FQA24N50
Beschreibung 500V N-Channel MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
FQA24N50 Datasheet, Funktion
June 2014
FQA24N50
N-Channel QFET® MOSFET
500 V, 24 A, 200 mΩ
Features
• 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A
• Low Gate Charge (Typ. 90 nC)
• Low Crss (Typ. 55 pF)
• 100% Avalanche Tested
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switch mode power supply, power factor correction,
electronic lamp ballast based on half bridge.
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
S
FQA24N50
500
24
15.2
96
± 30
1100
24
29
4.5
290
2.33
-55 to +150
300
Typ.
--
0.24
--
Max.
0.43
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
1
www.fairchildsemi.com






FQA24N50 Datasheet, Funktion
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
6
www.fairchildsemi.com

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