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AU5790 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer AU5790
Beschreibung Single wire CAN transceiver
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 20 Seiten
AU5790 Datasheet, Funktion
INTEGRATED CIRCUITS
AU5790
Single wire CAN transceiver
Product data
Supersedes data of 2001 Jan 31
IC18 Data Handbook
2001 May 18
Philips
Semiconductors






AU5790 Datasheet, Funktion
Philips Semiconductors
Single wire CAN transceiver
Product data
AU5790
ABSOLUTE MAXIMUM RATINGS
According to the IEC 134 Absolute Maximum System: operation is not guaranteed under these conditions; all voltages are referenced to
pin 8 (GND); positive currents flow into the IC, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
VBAT
VBATld
Supply voltage
Short-term supply voltage
Steady state
Load dump; ISO7637/1 test pulse 5
(SAE J1113, test pulse 5), T < 1s
–0.3 +27 V
+40 V
VBATtr2
Transient supply voltage
ISO 7637/1 test pulse 2 (SAE J1113,
test pulse 2), with series diode and
bypass cap of 100 nF between BAT and
GND pins, Note 2.
+100
V
VBATtr3
Transient supply voltage
ISO 7637/1 pulses 3a and 3b
(SAE J1113 test pulse 3a and 3b),
Note 2.
–150
+100
V
VCANH_1
VCANH_0
VCANHtr1
VCANHtr2
VCANHtr3
CANH voltage
CANH voltage
Transient bus voltage
Transient bus voltage
Transient bus voltage
VBAT > 2 V
VBAT < 2 V
ISO 7637/1 test pulse 1, Notes 1 and 2
ISO 7637/1 test pulse 2, Notes 1 and 2
ISO 7637/1 test pulses 3a, 3b,
Notes 1 and 2
–10
–16
–100
–150
+18
+18
+100
+100
V
V
V
V
V
VRTH1
Pin RTH voltage
VBAT > 2 V, voltage applied to pin RTH
via a 2 kseries resistor
–10
+18 V
VRTH0
Pin RTH voltage
VBAT < 2 V, voltage applied to pin RTH
via a 2 kseries resistor
–16
+18 V
VI
ESDBAHB
DC voltage on pins TxD, EN, RxD, NSTB
ESD capability of pin BAT
Direct contact discharge,
R=1.5 k, C=100 pF
–0.3 +7 V
–8 +8 kV
ESDCHHB ESD capability of pin CANH
Direct contact discharge,
R=1.5 k, C=100 pF
–8 +8 kV
ESDRTHB
ESD capability of pin RTH
Direct contact discharge,
R=1.5 k+ 3 k, C=100 pF
–8 +8 kV
ESDLGHB
ESD capability of pins TxD, NSTB, EN, RxD, and Direct contact discharge,
RTH
R=1.5 k, C=100 pF
–2 +2 kV
RTmin
Bus load resistance RT being connected to pin
RTH
2 k
Tamb
Tstg
Tvj
Operating ambient temperature
Storage temperature
Junction temperature
–40
+125
°C
–40
+150
°C
–40
+150
°C
NOTES:
1. Test pulses are coupled to CANH through a series capacitance of 1 nF.
2. Rise time for test pulse 1: tr < 1 µs; pulse 2: tr < 100 ns; pulses 3a/3b: tr < 5 ns.
2001 May 18
6

6 Page









AU5790 pdf, datenblatt
Philips Semiconductors
Single wire CAN transceiver
Product data
AU5790
TEST CIRCUITS
TxD
S1 NSTB
EN
S2 RxD
2.4 k
5.1V
AU5790
GND
CANH
RTH
BAT
9.1 k
I_CAN_LG
1.5 k
1 µF
VBAT
S3
Figure 3. Loss of ground test circuit
NOTES:
Opening S3 simulates loss of module ground.
Check I_CAN_LG with the following switch positions to simulate loss of ground in all modes:
1. S1 = open = S2
2. S1 = open, S2 = closed
3. S1 = closed, S2 = open
4. S1 = closed = S2
SL01234
2001 May 18
12

12 Page





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