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PDF ATF55143 Data sheet ( Hoja de datos )
| Número de pieza | ATF55143 | |
| Descripción | Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Agilent ATF-55143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
www.DataSheet4U.com
Description
Agilent Technologies’s ATF-55143
is a high dynamic range, very low
noise, single supply E-PHEMT
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
The combination of high gain,
high linearity and low noise
makes the ATF-55143 ideal for
cellular/PCS handsets, wireless
data systems (WLL/RLL, WLAN
and MMDS) and other systems in
the 450 MHz to 6 GHz frequency
range.
Surface Mount Package
SOT-34 3
Features
• High linearity performance
• Single Supply Enhancement Mode
Technology [1]
• Very low noise figure
• Excellent uniformity in product
specifications
• 400 micron gate width
• Low cost surface mount small
plastic package SOT-343 (4 lead
SC-70)
• Tape-and-Reel packaging option
available
Pin Connections and
Package Marking
Specifications
2 GHz; 2.7V, 10 mA (Typ.)
• 24.2 dBm output 3rd order intercept
DRAIN
SOURCE
• 14.4 dBm output power at 1 dB
gain compression
SOURCE
GATE
Note:
Top View. Package marking provides orientation
and identification
“5F” = Device Code
“x” = Date code character
identifies month of manufacture.
• 0.6 dB noise figure
• 17.7 dB associated gain
Applications
• Low noise amplifier for cellular/
PCS handsets
• LNA for WLAN, WLL/RLL and
MMDS applications
• General purpose discrete E-PHEMT
for other ultra low noise applications
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
1 page  
ATF-55143 Typical Performance Curves, continued
17
16
15
14
13
www.DataSheet4U.co12m
11
2V
2.7V
3V
10
0 5 10 15 20 25 30 35
Idsq (mA)
Figure 15. P1dB vs. Idsq and Vds at 2 GHz.[1,2]
25
24
23
22
21
20
2V
19 2.7V
3V
18
0 5 10 15 20 25 30 35 40
Ids (mA)
Figure 16. Gain vs. Ids and Vds at 900 MHz.[1]
0.35
0.30
0.25
0.20
0.15 2V
2.7V
3V
0.10
0 5 10 15 20 25 30 35
Ids (mA)
Figure 17. Fmin vs. Ids and Vds at 900 MHz.
32
30
28
26
24
22
20 2V
2.7V
18 3V
16
0 5 10 15 20 25 30 35
Ids (mA)
Figure 18. OIP3 vs. Ids and Vds at 900 MHz.[1]
7
6
5
4
3
2
1
0 2V
-1 2.7V
3V
-2
0 5 10 15 20 25 30 35
Ids (mA)
Figure 19. IIP3 vs. Ids and Vds at 900 MHz.[1]
17
16
15
14
13
12
11 2V
2.7V
10 3V
9
0 5 10 15 20 25 30 35
Idsq (mA)
Figure 20. P1dB vs. Idsq and Vds at
900 MHz.[1,2]
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. P1dB measurements are performed with
passive biasing. Quiescent drain current, Idsq,
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
point. At lower values of Idsq, the device is
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a VDS =
2.7V and Idsq = 5 mA, Id increases to 15 mA as
a P1dB of +14.5 dBm is approached.
5 Page 
ATF-55143 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12
Mag. Ang.
0.1
0.5
0.9
1.0
1.5
www.DataSheet41U.9.com
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.997
0.947
0.860
0.840
0.739
0.672
0.658
0.597
0.554
0.515
0.523
0.538
0.559
0.579
0.615
0.690
0.748
0.787
0.816
0.841
0.867
0.862
0.877
0.921
-7.4
-35.8
-60.8
-66.6
-91.7
-108.6
-112.7
-131.7
-149.7
175.4
143.7
118.2
96.4
75.2
56
37.7
21.7
7.9
-7.3
-22.9
-37.3
-50.5
-59.7
-70
23.29
22.72
21.67
21.37
19.83
18.68
18.41
17.16
16.04
14.17
12.55
11.06
9.78
8.62
7.65
6.73
5.57
4.48
3.5
2.55
1.15
-0.44
-1.83
-2.99
14.603
13.682
12.116
11.705
9.802
8.587
8.323
7.21
6.341
5.114
4.239
3.572
3.084
2.699
2.413
2.171
1.9
1.675
1.496
1.341
1.142
0.95
0.81
0.709
174.2
152
133
128.8
110.6
98.5
95.8
82.7
70.9
49.1
28.6
9.6
-8.4
-25.9
-43.3
-62.1
-80.3
-97.3
-114.9
-133.5
-152.1
-169
176.3
160.6
0.005
0.024
0.038
0.041
0.051
0.057
0.059
0.065
0.069
0.078
0.084
0.09
0.095
0.098
0.107
0.117
0.122
0.126
0.128
0.13
0.124
0.118
0.116
0.111
85.8
69.2
56.2
53.4
42.4
36
34.5
28.4
23
13.3
3.7
-5
-14.7
-24.2
-31
-44
-56.4
-68.5
-81.4
-95.1
-109.2
-121.9
-133.3
-147.1
S22
Mag. Ang.
0.755
0.713
0.652
0.633
0.56
0.513
0.503
0.455
0.409
0.328
0.267
0.232
0.201
0.162
0.113
0.055
0.096
0.164
0.210
0.277
0.386
0.483
0.555
0.612
-4.4
-21.1
-34.6
-37.3
-48
-54
-55.3
-60.9
-65.7
-76.7
-90.7
-104.8
-119.6
-127.4
-136.5
160.9
75.9
45.5
23.7
3
-14.3
-26.3
-39.5
-53.9
MSG/MAG
dB
34.65
27.56
25.04
24.56
22.84
21.78
21.49
20.45
19.63
18.17
17.03
10.28
9.37
8.50
8.31
8.81
8.85
8.75
8.62
8.48
7.84
6.39
6.08
7.60
Typical Noise Parameters,VDS = 2.7V, IDS = 20 mA
Freq Fmin
GHz dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5 0.20 0.65 17.6 0.1
0.9 0.25 0.55 23.6 0.1
1.0 0.26 0.53 28.3 0.1
1.9 0.39 0.49 49
0.09
2.0 0.4 0.48 51.5 0.09
2.4 0.47 0.38 62
0.08
3.0 0.56 0.32 79.6 0.07
3.9
0.69 0.19 120
0.06
5.0
0.85
0.18
-168.8
0.06
5.8
0.98
0.22
-135.4
0.08
6.0
1.01
0.22
-128.7
0.09
7.0 1.15 0.29 -94.6 0.15
8.0 1.32 0.35 -66.7 0.25
9.0 1.47 0.44 -45.7 0.38
10.0 1.58 0.54 -28.6 0.57
Ga
dB
25.79
23.9
23.45
19.94
19.6
18.34
16.71
14.8
13.14
12.3
12.12
11.38
10.74
10.04
9.1
40
35
30
25
20
MSG
15
10
5 |S21| 2
0
-5
0 5 10 15
FREQUENCY (GHz)
Figure 30. MSG/MAG and |S 21| 2 vs.
Frequency at 2.7V, 20 mA.
20
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet ATF55143.PDF ] | |
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