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ES1B Schematic ( PDF Datasheet ) - General Semiconductor

Teilenummer ES1B
Beschreibung SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Hersteller General Semiconductor
Logo General Semiconductor Logo 




Gesamt 2 Seiten
ES1B Datasheet, Funktion
ES1A THRU ES1D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
Forward Current - 1.0 Ampere
DO-214AC
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Ideally suited for use in
very high frequency switching power supplies,
inverters and as a free wheeling diodes
Ultrafast recovery times for high efficiency
Low forward voltage
Low leakage current
Glass passivated chip junction
High temperature soldering guaranteed:
250°C/10 seconds on terminals
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=120°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.6A
at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TA=25°C
TA=100°C
Maximum stored charge
(NOTE 2)
TA=25°C
TA=100°C
Typical junction capacitance (NOTE 3)
Maximum thermal resistance (NOTE 4)
Operating and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
Qrr
CJ
RΘJA
RΘJL
TJ, TSTG
ES1A
EA
50
35
50
ES1B
EB
100
70
100
ES1C
EC
150
105
150
1.0
30.0
0.865
0.920
5.0
100
15.0
25.0
35.0
10.0
25.0
7.0
85.0
35.0
-55 to +150
ES1D
ED
200
140
200
UNITS
Volts
Volts
Volts
Amp
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and Qrr measured at: IF=0.6A, VR=30V, di/dt=50A/µs, Irr =10% IRM for measurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
(4) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
4/98





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