Datenblatt-pdf.com

F1066 Schematic ( PDF Datasheet ) - Polyfet RF Devices

Teilenummer F1066
Beschreibung PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Hersteller Polyfet RF Devices
Logo Polyfet RF Devices Logo 




Gesamt 2 Seiten
F1066 Datasheet, Funktion
polyfet rf devices
F1066
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
100 Watts Push - Pull
Package Style AD
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
290 Watts
0.6 oC/W
200 oC
-65 oC to 150oC
16 A
70 V
70 V 30V
RF CHARACTERISTICS ( 100WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.2 A, Vgs = 0V
Idss Zero Bias Drain Curren
4 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.4 A, Vgs = Vds
gM Forward Transconductanc
3.2
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.35
Ohm
Vgs = 20V, Ids = 16 A
Idsat
Saturation Curren
22
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
132 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
16
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
80 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com





SeitenGesamt 2 Seiten
PDF Download[ F1066 Schematic.PDF ]


Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
F1060PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices
F1060CTSchottky Barrier RectifiersTasund
Tasund
F1063PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices
F1065PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices
F1066PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2020   |  Kontakt  |   Suche