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F1020 Schematic ( PDF Datasheet ) - Polyfet RF Devices

Teilenummer F1020
Beschreibung PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Hersteller Polyfet RF Devices
Logo Polyfet RF Devices Logo 




Gesamt 2 Seiten
F1020 Datasheet, Funktion
polyfet rf devices
F1020
General Description
Silicon VDMOS and LDMOS
PATENTED GOLD METALIZED
transistors designed specifically
SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Military Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
130 Watts Gemini
Laser Driver and others.
"Polyfet"TM process features
Package Style AR
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
and high Ft enhance broadband
HIGH GAIN, LOW NOISE
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
390 Watts
0.45 oC/W
200 oC
-65 oC to 150oC
20 A
70 V
70 V 30V
RF CHARACTERISTICS ( 130 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 2 A, Vds = 28.0 V, F = 400 MHz
η
VSWR
Drain Efficienc
Load Mismatch Toleranc
60 % Idq = 2 A, Vds = 28.0 V, F = 400 MHz
20:1 Relative Idq = 2 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.25 A, Vgs = 0V
Idss Zero Bias Drain Curren
5 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.5 A, Vgs = Vds
gM Forward Transconductanc
4 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.25
Ohm
Vgs = 20V, Ids = 20 A
Idsat
Saturation Curren
27.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
165 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
100 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com





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