Datenblatt-pdf.com

F1016 Schematic ( PDF Datasheet ) - Polyfet RF Devices

Teilenummer F1016
Beschreibung PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Hersteller Polyfet RF Devices
Logo Polyfet RF Devices Logo 




Gesamt 2 Seiten
F1016 Datasheet, Funktion
polyfet rf devices
F1016
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"TM process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F t enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
20 Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
100 Watts
1.75 oC/W
200 oC
-65oC to 150oC
4A
70 V
70V 30V
RF CHARACTERISTICS ( 20WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Pow er Gain
13
dB Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdow n Voltage
65
V Ids = 0.05 A, Vgs = 0V
Idss Zero Bias Drain Current
1 mA Vds = 28.0V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Current
1 7 V Ids = 0.1 A, Vgs = Vds
gM Forw ard Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
1
Ohm
Vgs = 20V, Ids = 4 A
Idsat
Saturation Current
5.5
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
4
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com





SeitenGesamt 2 Seiten
PDF Download[ F1016 Schematic.PDF ]


Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
F101DiodeAmerican Microsemiconductor
American Microsemiconductor
F1010EL IRF1010ELPower MOSFET
Power MOSFET
F1010ES IRF1010ESPower MOSFET
Power MOSFET
F1010NIRF1010NInternational Rectifier
International Rectifier
F1012PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2020   |  Kontakt  |   Suche