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Teilenummer | FDS4080N7 |
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Beschreibung | 40V N-Channel FLMP PowerTrench MOSFET | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 7 Seiten May 2003
FDS4080N7
40V N-Channel FLMP PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 13 A, 40 V
RDS(ON) = 10 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching (Qg = 30 nC )
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4080N7
FDS4080N7
13’’
Ratings
40
± 20
13
60
3.9
–55 to +150
38
1
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS4080N7 Rev C1 (W)
Dimensional Outline and Pad Layout
Bottom View
Top View
Minimum Recommended Landing Pattern
Notes: Unless otherwise Specified
a) All dimensions in mm
b) Standard lead finish:
20 – 80 µ inches nickel /
6 µ inches palladium
c) Chip Size Dimensional Table
Chip Size
X1 Y1 X2 Y2
2.36 2.36 0.75 0.67
FDS4080N7 Rev C1 (W)
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ FDS4080N7 Schematic.PDF ] |
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