FDS4072N3 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDS4072N3 | |
| Description | 40V N-Channel PowerTrench MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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May 2003
FDS4072N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 12.4 A, 40 V RDS(ON) = 12 mΩ @ VGS = 4.5 V
RDS(ON) = 10 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4072N3
FDS4072N3
13’’
2002 Fairchild Semiconductor Corporation
Ratings
40
± 12
12.4
60
3.0
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS4072N3 Rev B1 (W)
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Typical Characteristics
10
ID = 12.4A
8
6
VDS = 10V
30V
20V
4
2
0
0 20 40 60 80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
SINGLE PULSE
0.1 RθJA = 85oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
6000
5000
4000
CISS
f = 1MHz
VGS = 0 V
3000
2000
1000
COSS
CRSS
0
0 10 20 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDS4072N3 Rev B1 (W)
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| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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