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FDP2572 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDP2572
Beschreibung N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 11 Seiten
FDP2572 Datasheet, Funktion
September 2002
FDB2572 / FDP2572
N-Channel PowerTrench® MOSFET
150V, 29A, 54m
Features
• rDS(ON) = 45m(Typ.), VGS = 10V, ID = 9A
• Qg(tot) = 26nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82860
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
SOURCE
DRAIN
(FLANGE)
DRAIN
GATE
GATE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
TO-263AB
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
G
Ratings
150
±20
29
20
4
Figure 4
36
135
0.9
-55 to 175
1.11
62
43
D
S
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDB2572 / FDP2572 Rev. B






FDP2572 Datasheet, Funktion
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VGS
Ig(REF)
VDS
L
DUT
+
VDD
-
Figure 17. Gate Charge Test Circuit
VDD
Qg(TOT)
VDS
VGS
VGS = 2V
0
Qg(TH)
Qgs2
Qgs
Ig(REF)
0
Qgd
VGS = 10V
Figure 18. Gate Charge Waveforms
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
Figure 19. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
Figure 20. Switching Time Waveforms
©2002 Fairchild Semiconductor Corporation
FDB2572 / FDP2572 Rev. B

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