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FDN336P Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDN336P
Beschreibung Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 5 Seiten
FDN336P Datasheet, Funktion
November 1998
FDN336P
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-1.3 A, -20 V. RDS(ON) = 0.20 @ VGS = -4.5 V
RDS(ON) = 0.27 @ VGS= -2.5 V.
Low gate charge (3.6 nC typical).
High performance trench technology for extremely low
RDS(ON).
High power version of industry standard SOT-23 package.
Identical pin out to SOT-23 with 30% higher power handling
capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
336
SuperSOTTM-3
G
S
D
GS
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current
- Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDN336P
-20
±8
-1.3
-10
0.5
0.46
-55 to +150
250
75
Units
V
V
A
W
°C
°C/W
°C/W
FDN336P Rev.C





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