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FDG6320C Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDG6320C
Beschreibung Dual N & P Channel Digital FET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 12 Seiten
FDG6320C Datasheet, Funktion
November 1998
FDG6320C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETS. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.
Features
N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V,
RDS(ON) = 5.0 @ VGS= 2.7 V.
P-Ch -0.14 A, -25V, RDS(ON) = 10 @ VGS= -4.5V,
RDS(ON) = 13 @ VGS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOTTM-6
SOT-8
SO-8
SOIC-14
S2
G2
D1 .20
pin 1
SC70-6
D2
G1
S1
16
25
34
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD
TJ,TSTG
ESD
Maximum Power Dissipation
(Note 1)
Operating and Storage Temperature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
N-Channel
25
8
0.22
0.65
0.3
-55 to 150
6
415
P-Channel
-25
-8
-0.14
-0.4
Units
V
V
A
W
°C
kV
°C/W
© 1998 Fairchild Semiconductor Corporation
FDG6320C Rev. D






FDG6320C Datasheet, Funktion
Typical Electrical Characteristics: P-Channel
0.2
VGS = -4.5V
-3.5V
0.15
-3.0V
-2.7V
-2.5V
0.1
0.05
-2.0V
2.5
VGS = -2.0V
2
1.5
1
-2.5V
-2.7V
-3.0V
-3.5V
-4.0V
-4.5V
0
01234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
0.5
0
0.05 0.1 0.15
-I D, DRAIN CURRENT (A)
0.2
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -0.14A
1.4 V GS= -4.5V
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 13. On-Resistance Variation
with Temperature.
0.14
VDS = -5.0V
0.12
0.1
TA = -55°C 25°C
125°C
0.08
0.06
0.04
0.02
0
0123
-VGS , GATE TO SOURCE VOLTAGE (V)
4
Figure 15. Transfer Characteristics.
25
ID = -0.07A
20
15
TA = 125°C
10
5 TA = 25°C
0
1.5 2 2.5 3 3.5 4 4.5 5
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0.3
VGS= 0V
0.1
0.01
TA = 125°C
25°C
-55°C
0.001
0.0001
0.2
0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6320C.Rev D

6 Page









FDG6320C pdf, datenblatt
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or
In Design
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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