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Teilenummer | FDD6630A |
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Beschreibung | N-Channel PowerTrench MOSFET | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 5 Seiten FDD6630A
N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
Applications
DC/DC converter
Motor drives
July 1999
ADVANCE INFORMATION
Features
21 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V
RDS(ON) = 0.050 Ω @ VGS = 4.5 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
D
G
S
TO-252
D
G
S
Absolute M aximum Ratings TC=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
Ratings
30
±20
21
7.6
100
28
3.2
1.3
-55 to +150
4.5
40
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6630A
FDD6630A
13’’
1999 Fairchild Semiconductor Corporation
Tape Width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500
FDD6630A Rev. A
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ FDD6630A Schematic.PDF ] |
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