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PDF FDD6030BL Data sheet ( Hoja de datos )
| Número de pieza | FDD6030BL | |
| Descripción | N-Channel PowerTrenchTM MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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July 2001
FDD6030BL/FDU6030BL
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor drives
Features
• 42 A, 30 V
RDS(ON) = 16 mΩ @ VGS = 10 V
RDS(ON) = 22 mΩ @ VGS = 4.5 V
• Low gate charge (22 nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
42
10
100
50
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6030BL
FDD6030BL
D-PAK (TO-252)
FDU6030BL
FDU6030BL
I-PAK (TO-251)
Reel Size
13’’
Tube
3.0
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2001 Fairchild Semiconductor Corporation
FDD6030BL/FDU6030BL Rev C(W)
1 page  
Typical Characteristics
10
ID = 10A
8
6
4
2
0
04
VDS = 5V
10V
15V
8 12 16 20 24
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
RDS(ON) LIMIT
10
100µs
1m
10ms
100ms
1s
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 96 oC/W
TA = 25oC
10s
DC
0.01
0.01
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
1600
1200
f = 1MHz
VGS = 0 V
CISS
800
COSS
400
CRSS
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
100
SINGLE PULSE
80
R θJA = 96°C/W
TA = 25°C
60
40
20
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Rθ JA(t) = r(t) + RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.001
0.01
0.1
1
10 100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6030BL/FDU6030BL Rev. C(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDD6030BL.PDF ] | |
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