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PDF FDD5680 Data sheet ( Hoja de datos )
| Número de pieza | FDD5680 | |
| Descripción | N-Channel/ PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2000
FDD5680
N-Channel, PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• DC/DC converter
• Motor drives
Features
• 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
RDS(on) = 0.025 Ω @ VGS = 6 V.
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(on).
D
D
G
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximun Drain Current - Continuous
(Note 1)
(Note 1a)
Maximum Drain Current
- Pulsed
Maximum Power Dissipation @ TC = 25oC (Note 1)
TA = 25oC (Note 1a)
TA = 25oC (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
S
Ratings
60
±20
38
8.5
100
60
2.8
1.3
-55 to +150
2.1
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5680
FDD5680
13’’
2000 Fairchild Semiconductor International
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD5680, Rev. C
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDD5680.PDF ] | |
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