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FDC6322C Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDC6322C
Beschreibung Dual N & P Channel / Digital FET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 7 Seiten
FDC6322C Datasheet, Funktion
November 1997
FDC6322C
Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.
Features
N-Ch 25 V, 0.22 A, RDS(ON) = 5 @ VGS= 2.7 V.
P-Ch 25 V, -0.46 A, RDS(ON) = 1.5 @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. VGS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace NPN & PNP digital transistors.
SOT-23
SuperSOTTM-6
Mark: .322
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
43
52
61
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
N-Channel
VDSS, VCC
VGSS, VIN
ID, IO
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage,
Drain/Output Current - Continuous
- Pulsed
25
8
0.22
0.5
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG
ESD
Operating and Storage Tempature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
0.9
0.7
-55 to 150
6
140
60
P-Channel
-25
-8
-0.46
-1
Units
V
V
A
W
°C
kV
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
FDC6322C.Rev B1






FDC6322C Datasheet, Funktion
Typical Electrical Characteristics: P-Channel
-1.5
VGS = -4.5V
-1.25
-1
-3.5
-3.0
-2.7
-2.5
-0.75
-0.5
-2.0
-0.25
0
0
-1.5
-1 -2 -3 -4
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
-5
-1.6
-1.4 V GS = -2.0 V
-1.2
-2.5
-2.7
-1 -3.0
-3.5
-0.8 -4.0
-4.5
-0.6
0
-0.2 -0.4 -0.6 -0.8
I D , DRAIN CURRENT (A)
-1
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -0.25A
1.4 V GS = -2.7V
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. On-Resistance Variation
with Temperature.
5
25°C
4 125°C
3
I D = -0.5A
2
1
0
-1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On Resistance Variation with
-1
-0.75
VDS = -5V
-0.5
T = -55°C
J
25°C
125°C
-0.25
0
-0.5
-1 -1.5 -2 -2.5
V GS , GATE TO SOURCE VOLTAGE (V)
-3
Figure 15. Transfer Characteristics.
0.5
VGS = 0V
0.1
0.01
TJ = 125°C
25°C
-55°C
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC6322C.Rev B1

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