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FDC6310P Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDC6310P
Beschreibung Dual P-Channel 2.5V Specified PowerTrench MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 5 Seiten
FDC6310P Datasheet, Funktion
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
–2.2 A, –20 V. RDS(ON) = 125 m@ VGS = –4.5 V
RDS(ON) = 190 m@ VGS = –2.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
43
52
61
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.310
FDC6310P
7’’
©2001 Fairchild Semiconductor Corporation
Ratings
–20
±12
–2.2
–6
0.96
0.9
0.7
–55 to +150
130
60
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDC6310P Rev C(W)





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