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Teilenummer | FDC6036P |
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Beschreibung | P-Channel 1.8V Specified PowerTrench MOSFET | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 7 Seiten January 2004
FDC6036P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the RDS(ON) and thermal
properties of the device are optimized for battery power
management applications.
Applications
• Battery management/Charger Application
• Load switch
Features
• –5 A, –20 V.
RDS(ON) = 44 mΩ @ VGS = –4.5 V
RDS(ON) = 64 mΩ @ VGS = –2.5 V
RDS(ON) = 95 mΩ @ VGS = –1.8 V
• Low gate charge, High Power and Current handling
capability
• High performance trench technology for extremely
low RDS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Bottom Drain Contact
43
52
61
Bottom Drain Contact
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID Drain Current – Continuous
(Note 1a)
– Pulsed
PD Power Dissipation for Dual Operation
TJ, Tstg
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
.036
FDC6036P
7’’
2004 Fairchild Semiconductor Corporation
Ratings
–20
±8
–5
–20
1.8
1.8
0.9
–55 to +150
68
1
8mm
Units
V
V
A
W
°C
°C/W
3000 units
FDC6036P Rev C2 (W)
Typical Characteristics
5
ID = -5A
4
3
2
1
0
02
Vds = -5V
-15V
-10V
468
Qg, GATE CHARGE (nC)
10 12
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 130oC/W
TA = 25oC
0.01
0.1
100µs
1ms
10ms
100ms
1s
10s
DC
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1500
1250
1000
750
500
250
0
0
Ciss
f = 1MHz
VGS = 0 V
Coss
Crss
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
8
RθJA = 130oC/W
TA = 25oC
6
4
2
0
0.01
0.1 1 10 100
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
D = 0.5
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 130 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC6036P Rev C2 (W)
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ FDC6036P Schematic.PDF ] |
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