|
|
PDF FDC3616N Data sheet ( Hoja de datos )
| Número de pieza | FDC3616N | |
| Descripción | 100V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDC3616N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
January 2004
FDC3616N
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Load Switching
Features
• 3.7 A, 100 V.
RDS(ON) = 70 mΩ @ VGS = 10 V
RDS(ON) = 80 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (23nC typical)
• High power and current handling capability
• Fast switching speed.
G
S
S
SuperSOT-6TM FLMP
S
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.616
FDC3616N
7’’
Bottom Drain
1
2
3
Ratings
100
± 20
3.7
20
2
1.1
−55 to +150
60
111
0.5
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)
1 page  
Typical Characteristics
10
ID =3.7A
8
6
VDS = 30V
50V
70V
4
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
100µs
1ms
10ms
100ms
1 1s
10s
VGS = 10V
DC
0.1 SINGLE PULSE
RθJA = 111oC/W
TA = 25oC
0.01
0.1
1
10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
1800
1500
1200
CISS
f = 1MHz
VGS = 0 V
900
600
300 COSS
CRSS
0
0
25 50 75
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 111°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 111 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDC3616N Rev C1 (W)
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDC3616N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDC3616N | 100V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |