Datenblatt-pdf.com


FCPF7N60 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FCPF7N60
Beschreibung 600V N-Channel MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
FCPF7N60 Datasheet, Funktion
FCP7N60 / FCPF7N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.53
• Ultra low gate charge (typ. Qg = 25nC)
• Low effective output capacitance (typ. Coss.eff = 60pF)
• 100% avalanche tested
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GDS
TO-220
GD S
TO-220F
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP7N60 FCPF7N60
600
7 7*
4.4 4.4*
21 21*
± 30
230
7
8.3
4.5
83 31
0.67 0.25
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP7N60
1.5
62.5
FCPF7N60
4.0
62.5
Unit
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. A
1
www.fairchildsemi.com






FCPF7N60 Datasheet, Funktion
Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
FCP7N60 / FCPF7N60 Rev. A
6
www.fairchildsemi.com

6 Page







SeitenGesamt 10 Seiten
PDF Download[ FCPF7N60 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
FCPF7N60600V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor
FCPF7N60NTMOSFET ( Transistor )Fairchild Semiconductor
Fairchild Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche