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Número de pieza | FC130 | |
Descripción | NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FC130 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Ordering number:EN3284
FC130
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
· On-chip bias resistance (R1=10kΩ).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC130 is formed with two chips, being equiva-
lent to the 2SC3859, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Package Dimensions
unit:mm
2066
[FC130]
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditons
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
IC=10mA, IB=0.5mA
IC=10µA, IE=0
IC=100µA, RBE=∞
VCE=5V, IC=100µA
VCE=0.2V, IC=10mA
Note:The specifications shown above are for each individual transistor.
Marking:130
Ratings
50
50
5
100
200
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Ratings
min typ
100
250
3.3
0.1
50
50
0.4 0.55
0.7 1.2
7 10
max
0.1
0.1
0.3
0.8
3.0
13
Unit
µA
µA
MHz
pF
V
V
V
V
V
kΩ
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2160MO, TS No.3284-1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet FC130.PDF ] |
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