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PDF FC118 Data sheet ( Hoja de datos )
| Número de pieza | FC118 | |
| Descripción | Low-Frequency General-Purpose Amp Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN3116
FC118
NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency
General-Purpose Amp Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC118 is formed with two chips, being equiva-
lent to the 2SC4577, placed in one package.
· Low collector to emitter saturation voltage.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC118]
Electrical Connection
E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collector1
Specifications
SANYO:CP6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
20
15
5
500
1
100
200
300
150
–55 to+150
Unit
V
V
V
mA
A
mA
mW
mW
˚C
˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
ICBO
IEBO
hFE(1)
hFE(2)
hFE(small/
large)
VCB=15V, IE=0
VEB=4V, IC=0
VCE=2V, IC=10mA
VCE=2V, IC=400mA
VCE=2V, IC=10mA
Gain-Bandwidth Product
fT VCE=2V, IC=50mA
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=10V, f=1MHz
IC=5mA. IB=0.5mA
IC=200mA. IB=10mA
IC=200mA. IB=10mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
Note: The specifications shown above are for each individual transistor.
Ratings
min typ
160
80
0.8 0.98
max
0.1
0.1
560
Unit
µA
µA
300
4
15
160
0.95
20
15
5
MHz
pF
30 mV
300 mV
1.2 V
V
V
V
Marking:110
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/5129MO, TS No.3116-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FC118.PDF ] | |
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