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FMBL1G200US60 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FMBL1G200US60
Beschreibung Molding Type Module
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FMBL1G200US60 Datasheet, Funktion
FMBL1G200US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A
• High input impedance
• Fast & soft anti-parallel FWD
Application
• Boost (Step Up) Converter
July 2001
IGBT
Package Code : 7PM-BB
E1/C2
C1 E2
G2 E2
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M6
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
FMBL1G200US60
600
± 20
200
400
200
400
10
830
-40 to +150
-40 to +125
2500
2.0
2.5
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
©2001 Fairchild Semiconductor Corporation
FMBL1G200US60 Rev. A






FMBL1G200US60 Datasheet, Funktion
30000
10000
Eoff
Eon
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 1.8
TC = 25
T = 125
100 C
30 40 60 80 100 120 140 160 180 200
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
1.5
12 TC = 25
9
V = 100 V
6 CC
300 V
200 V
3
0
0 100 200 300 400 500 600 700 800 900
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
1000
IC MAX. (Pulsed)
IC MAX. (Continuous)
100
50us
100us
1
DC Operation
10
Single Nonrepetitive
Pulse T = 25
C
Curves must be derated
linerarly with increase
in temperature
1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
1000
100
10
Safe Operating Area
V = 20V, T = 100oC
GE C
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
100
10
Single Nonrepetitive
Pulse T 125
J
V = 15V
GE
R
G
=
1.8
1
0 100 200 300 400 500 600
Collector-Emitter Voltage, V [V]
CE
700
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
1
0.1
0.01
1E-3
10-5
T =25
C
IGBT :
DIODE :
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
101
Fig 18. Transient Thermal Impedance
FMBL1G200US60 Rev. A

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