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Teilenummer | FJC1386 |
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Beschreibung | PNP Epitaxial Silicon Transistor | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 4 Seiten FJC1386
Low Saturation Transistor
Medium Power Amplifier
• Complement to FJC2098
• High Collector Current
• Low Collector-Emitter Saturation Voltage
1 SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-5
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, VB=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.5A
IC=-4, IB=-0.1A
IC=-4, IB=-0.1A
Min.
-30
-20
-6
80
Typ.
Max.
-0.5
-0.5
390
-1.0
-1.5
Units
V
V
V
µA
µA
V
V
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjA Thermal Resistance, Junction to Ambient
Max Units
250 °C/W
hFE Classification
Classification
hFE
P
80 ~ 180
Marking
Q
120 ~ 270
R
180 ~ 390
FAP
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ FJC1386 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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