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FJAF6806D Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FJAF6806D
Beschreibung NPN Triple Diffused Planar Silicon Transistor
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 5 Seiten
FJAF6806D Datasheet, Funktion
FJAF6806D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color TV
1 TO-3PF
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
B
50typ.
E
Rating
1500
750
6
6
12
50
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Base-Emitter Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VF Damper Diode Turn On Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=300mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=1A
IC=4A, IB=1A
IF = 4.5A
VCC=200V, IC=4A, RL=50
IB1=1.0A, IB2= - 2.0A
40
6
8
4
1 mA
10 µA
200 mA
V
7
5V
1.5 V
2V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
2.5
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002





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