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FGB20N6S2D Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGB20N6S2D
Beschreibung 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGB20N6S2D Datasheet, Funktion
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
Features
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon
• Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Package
Symbol
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
C
G
G
E
E
Device Maximum Ratings TC= 25°C unless otherwise noted
COLLECTOR (FLANGE)
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
28 A
IC110
Collector Current Continuous, TC = 110°C
13 A
ICM Collector Current Pulsed (Note 1)
40 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
35A at 600V
A
EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
PD Power Dissipation Total TC = 25°C
125 W
Power Dissipation Derating TC > 25°C
1.0 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1






FGB20N6S2D Datasheet, Funktion
Typical Performance Curves (Continued)
14
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
12
10
8
6
125oC
4
25oC
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VEC , FORWARD VOLTAGE (V)
Figure 19. Diode Forward Current vs Forward
Voltage Drop
250
dIEC/dt = 200A/µs, VCE = 390V
200
125oC tb, trr
150
100
25oC tb, trr
50
125oC ta
0 25o ta
0 2 4 6 8 10 12 14
IEC, FORWARD CURRENT (A)
Figure 20. Recovery Times vs Forward Current
160
IEC = 7A, VCE = 390V
140
120
100 125oC tb
80
25oC tb
60
40
125oC ta
20
25oC ta
0
200 300 400 500 600 700 800 900
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
Figure 21. Recovery Times vs Rate of Change of
Current
500
VCE = 390V
450
400
125oC, IEC = 7A
350
300
125oC, IEC = 3.5A
250
25oC, IEC = 7A
200
150 25oC, IEC = 3.5A
100
200
300 400 500 600 700 800 900
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
Figure 22. Stored Charge vs Rate of Change of
Current
6.0
VCE = 390V, TJ = 125°C
5.5
5.0
IEC = 7A
4.5
IEC = 3.5A
4.0
3.5
3.0
200
300 400 500 600 700 800 900
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
10
VCE = 390V, TJ = 125°C
9
8
IEC = 7A
7
6
IEC = 3.5A
5
4
3
200
300 400 500 600 700 800 900
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1

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