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FGB20N6S2 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGB20N6S2
Beschreibung 600V/ SMPS II Series N-Channel IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
FGB20N6S2 Datasheet, Funktion
August 2003
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49330.
Features
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
G
G
COLLECTOR
(Back-Metal)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
COLLECTOR
(Flange)
E
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
28 A
IC110
Collector Current Continuous, TC = 110°C
13 A
ICM Collector Current Pulsed (Note 1)
40 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
35 at 600V
A
EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
EARV
Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
PD Power Dissipation Total TC = 25°C
125 W
Power Dissipation Derating TC > 25°C
1.0 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2






FGB20N6S2 Datasheet, Funktion
Typical Performance Curves (Continued)
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-210-5
SINGLE PULSE
10-4 10-3 10-2 10-1 100
t1, RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
101
FGH20N6S2D
DIODE TA49469
RG = 25
FGH20N6S2
L = 500µH
+
- VDD = 390V
Figure 20. Inductive Switching Test Circuit
90%
VGE 10%
EON2
EOFF
VCE
90%
ICE 10%
td(OFF)I
tfI
trI
td(ON)I
Figure 21. Switching Test Waveforms
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2

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