(PDF) LZ1418E100R Datasheet - NPN microwave power transistor

Número de pieza	LZ1418E100R
Descripción	NPN microwave power transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 18 1 page Philips Semiconductors NPN microwave power transistor Product speciﬁcation LZ1418E100R handbook, full pagewidth VBB VCC ferrite bead 16 ,,,,,,,,,,,,input ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,50Ω 0.65 100 pF ATC 5 4 10 6 3 0.65 100 pF ATC output 50 Ω 33 6 5 2.5 6 2 6 1.5 MGK059 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.4 Wideband test circuit board for 1.4 to1.8 GHz, CW class A application. handbook,1h5alfpage PL1 (W) 10 MGL010 handbook,1h5alfpage Gpo (dB) 10 MGD982 5 1.3 1.6 f (GHz) 1.9 5 1.3 1.6 f (GHz) 1.9 VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C. Fig.5 Load power as a function of frequency; typical values. 1997 Feb 18 VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C. Fig.6 Linear power gain as a function of frequency; typical values. 5 5 Page Philips Semiconductors NPN microwave power transistor NOTES Product speciﬁcation LZ1418E100R 1997 Feb 18 11 11 Page

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PDF LZ1418E100R Data sheet ( Hoja de datos )