|Beschreibung||RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD|
Gesamt 6 Seiten
MOS FIELD EFFECT TRANSISTOR
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High Gps : 18 dB TYP.
• Low NF : 2.7 dB TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
ID 25 mA
Total Power Dissipation
Tstg –65 to +150
*RL ≥ 10 kΩ
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Drain to Source Breakdown Voltage
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transter Admittance
| yfs |
Reverse Transfer Capacitance
5˚ 5˚ 0.4+–00..105
3. Gate 2
4. Gate 1
VG1S = VG2S = –2 V, ID = 10 µA
VDS = 5 V, VG2S = 4 V, VG1S = 0
VDS = 10 V, VG2S = 4 V, ID = 10 µA
VDS = 10 V, VG1S = 4 V, ID = 10 µA
VDS = 0, VG1S = ±8 V, VG2S = 0
VDS = 0, VG2S = ±8 V, VG1S = 0
VDS = 5 V, VG2S = 4 V, ID = 10 mA,
f = 1 kHz
VDS = 10 V, VG2S = 4 V,
ID = 10 mA, f = 1 MHz
VDS = 10 V, VG2S = 4 V, ID = 10 mA,
f = 900 MHz
0.01 to 2
1 to 6
* Old specification/New specification
Document No. P10411EJ1V0DS00 (1st edition)
(Previous No. TN-1758)
Date Published August 1995 P
Printed in Japan
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
|Seiten||Gesamt 6 Seiten|
|PDF Download||[ 3SK135A Schematic.PDF ]|
|3SK135A||RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD|
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