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Teilenummer | 3N187 |
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Beschreibung | SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR | |
Hersteller | Vaishali Semiconductor | |
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Gesamt 8 Seiten 6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 3N187 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
3N187 | SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR | Vaishali Semiconductor |
3N187 | Trans MOSFET N-CH 25V 0.03A | New Jersey Semiconductor |
3N188 | (3N188 - 3N191) Dual P-Channel Enhancement Mode MOSFET | Intersil |
3N188 | Trans MOSFET N-CH 25V 0.03A | New Jersey Semiconductor |
3N189 | (3N188 - 3N191) Dual P-Channel Enhancement Mode MOSFET | Intersil |
Teilenummer | Beschreibung | Hersteller |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |