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PDF 2SK3408 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3408 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16+–00..016
3
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance
RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
ORDERING INFORMATION
12
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
PART NUMBER
2SK3408
PACKAGE
SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
43±5
Drain to Gate Voltage (VGS = 0 V)
VDGS
43±5
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±1.0
±4.0
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note2
PT1
PT2
0.2
1.25
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: XF
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15016EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000
1 page  
2SK3408
1000
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
100
tf
10
td(off)
tr
td(on)
VDD = 20V
VGS(on) = 10V
1 RG = 10Ω
0.1 1
ID - Drain Current - A
10
1
0.1
0.01
0.4
Pulsed
VGS = 0 V
0.6 0.8 1.0 1.2
VF(S-D) - Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS
12
ID = 1.0 A
10
VDD = 32 V
8 20 V
8V
6
4
2
0
0 1 2 345
Qg - Gate Charge - nC
5 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Without Board
100
Mounted on 250 mm2 x 35 µm
Copper Pad
Connected to Drain Electrode
in 2500 mm2 x 1.6 mm FR-4 Board
10
1
0.001
0.01
0.1 1 10
PW - Pulse Width - S
100 1000
Data Sheet D15016EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3408.PDF ] | |
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