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PDF 2SK3341-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3341-01 | |
| Descripción | N-CHANNEL SILICON POWER MOS-FET | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SK3341-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
Rating
VDS
900
ID ±10
ID(puls]
±40
VGS
±30
IAR *2
10
EAV *1
648
PD 310
Tch +150
Tstg -55 to +150
*1 L=11.9mH, Vcc=90V
Unit
V
A
A
V
A
mJ
W
°C
*2 Tch=<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=900V
VGS=0V
VGS=±30V VDS=0V
ID=5A VGS=10V
ID=5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=10A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
Vcc=450V
ID=10A
VGS=10V
L=11.9mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
900 V
2.5 3.0
3.5 V
10 500
µA
0.2 1.0 mA
10 100
nA
0.92 1.2 Ω
3.5 7
S
2200 3300
pF
240 360
115 173
28 42
ns
70 105
220 330
90 135
120 180
nC
36 54
40 60
10 A
1.00 1.50 V
1.8 µs
21.0
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.403 °C/W
50.0 °C/W
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3341-01.PDF ] | |
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