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PDF 2SK3339-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3339-01 | |
| Descripción | N-CHANNEL SILICON POWER MOS-FET | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SK3339-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
Rating
VDS
500
ID ±27
ID(puls]
±108
VGS
±30
IAR *2
27
EAV *1
914
PD 400
Tch +150
Tstg -55 to +150
*1 L=2.30mH, Vcc=50V
Unit
V
A
A
V
A
mJ
W
°C
*2 Tch=<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=500V
VGS=0V
VGS=±30V VDS=0V
ID=13.5A VGS=10V
ID=13.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=27A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
Vcc=250V
ID=27A
VGS=10V
L=2.30mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max.
500
2.5 3.0
3.5
10 500
0.2 1.0
10 100
0.16 0.2
11 22
4300 6450
630 945
285 430
40 60
145 220
315 475
150 225
198 300
38 60
81 125
27
1.2 1.8
660
15.0
Units
V
V
µA
mA
nA
Ω
S
pF
ns
nC
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.3125 °C/W
50.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3339-01.PDF ] | |
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