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2SK3305-ZJ Schematic ( PDF Datasheet ) - NEC

Teilenummer 2SK3305-ZJ
Beschreibung SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Hersteller NEC
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Gesamt 8 Seiten
2SK3305-ZJ Datasheet, Funktion
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3305
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3305 is N-Channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge:
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A)
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3305
2SK3305-S
2SK3305-ZJ
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
500
±30
±5
±20
75
1.5
150
–55 to +150
5.0
125
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 , VGS = 20 V ¡ 0 V
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14003EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
1998,2000






2SK3305-ZJ Datasheet, Funktion
2SK3305
Figure17. SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
150
ID(peak) = IAS
RG = 25
125 VGS = 20 V 0 V
VDD = 150 V
100 EAS = 125 mJ
75
50
25
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
Figure18. SINGLE AVALANCHE CURRENT vs
INDUCTIVE LOAD
100 RG = 25
VDD = 150 V
VGS = 20 V 0 V
Starting Tch = 25 ˚C
10
IAS = 5.0 A
EAS = 125 mJ
1
0.1
100 µ
1 m 10 m
L - Inductive Load - H
100 m
6 Data Sheet D14003EJ1V0DS00

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