|
|
PDF 2SK3305-S Data sheet ( Hoja de datos )
| Número de pieza | 2SK3305-S | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK3305-S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3305
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3305 is N-Channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge:
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3305
2SK3305-S
2SK3305-ZJ
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
500
±30
±5
±20
75
1.5
150
–55 to +150
5.0
125
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V ¡ 0 V
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14003EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
1998,2000
1 page  
2SK3305
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
ID = 5.0 A
2.0 ID = 2.5 A
1.0
0.0
–50
10000
1000
VGS = 10 V
0 50 100 150
Tch - Channel Temperature - ˚C
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1.0 MHz
Ciss
100
Coss
10
Crss
1
0.1
1
10 100
VDS - Drain to Source Voltage - V
1000
2000
1800
1600
1400
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
1200
1000
800
600
400
200
0
0.1 1 10 100
IF - Drain Current - A
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10
1 VGS = 10 V
VGS = 0 V
0.1
0.01
0.0 0.5 1.0
1.5
VSD - Source to Drain Voltage - V
Figure14. SWITCHING CHARACTERISTICS
100
tr
td(off)
td(on)
10 tf
1
0.1
0.1
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1 10 100
ID - Drain Current - A
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
ID = 5.0 A
700 14
600 VDD = 400 V
VGS
12
250 V
500 125 V
10
400 8
300 6
200
VDS
100
4
2
2 4 6 8 10 12 14
QG - Gate Charge - nC
Data Sheet D14003EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3305-S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK3305-S | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| 2SK3305-ZJ | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |